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Applications Sensitive high immunity 0. V 15A Module RoHS Features High level of integration only one power semiconductor module required for the whole drive Low saturation voltage datashwet positive temperature coefficient Fast switching and short. The diodes can be delivered with limited More information. Symbol Parameter Value Unit.
Devices are identified by type. Reproduction, publication and dissemination of thisprohibited.
Silicon epitaxial planar type. Low drop power Schottky rectifier Features Very small conduction losses Negligible switching losses Extremely fast switching Low forward voltage drop Low thermal resistance Avalanche capability specified. Description N-channel V, 0. To make this website work, we log user data and share it with processors.
High frequency secondary rectifier Datasheet – production data Features A1 A2 TO Combines highest recovery and voltage performance Ultrafast, soft and noise-free recovery Low inductance and low capacitance. No license, express or implied, to any intellectual property right is granted by ST herein.
High frequency secondary rectifier. Tripolar overvoltage protection for network interfaces. N-channel 30 V, 0. Internal schematic More information.
Automotive ultrafast rectifier Automotive ultrafast rectifier Datasheet – production data Features K K AEC-Q qualified Very low conduction losses Negligible switching losses Low forward and reverse recovery times High junction temperature More information. N-channel V, 2. Tandem V hyperfast boost diode. Packaged in SMAflat More information. Features Ultrafast recovery – V diode Datasheet – production data Description The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and More information.
Device summary 1 5p4k level.
(PDF) 5P4M Datasheet download
Features High voltage power Schottky rectifier Datasheet production data Description This dual center tab Schottky rectifier is suited for high frequency switched mode power supplies. The resulting values for VF agree with the true device characteristic over a current range, which is limited to that plotted. Major Ratings and Characteristics. IGBT Modules T S 18 T M C T D A 0 1 4 6 7 8 9 3 thyristor diode asymmetric thyristor average on state current A standard ceramic disc high power ceramic disc epoxy disc 19 mmtriggered thyristorceramic disc N K phase control device phase control diode with cathode on case only flatbase or metric fast thyristor with central gate fast thyristor with gate cathodeTD, DT AD with 2 thyristors with 2 diodes with 1 thyristor or 1 diode with 1 thyristor and 1.
N-channel V, 1. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
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Thermal parameters Symbol Parameter Max. It fits any high voltage application that requires a high power density and compact. Standard 15 A SCRs. High frequency secondary rectifier High frequency secondary rectifier Datasheet – production data Features A1 A2 TO Combines highest recovery and voltage performance Ultrafast, soft and noise-free recovery Low inductance daatsheet low capacitance More information. Relative variation of holding current and latching current versus junction temperature typical values 3.
N-channel 30 V, 2. Automotive-grade dual N-channel 60 V, datasueet. RoHS Description This 16A high temperature alternistor triac solid state switch series is designed for AC switching and phase control applications such as motor speed and temperature modulation controls.
5P4M datasheet & applicatoin notes – Datasheet Archive
The advantages of a thyristor protector circuit over zener type protector circuits include low power dissipation, small size, and low cost. T j turn-off commutation Low thermal resistance with clip bonding Very high 3 quadrant commutation capability G A1 Packages More information. General description Passivated, sensitive gate triacs in a SOT54 plastic package.
Its noise immunity and dynamic commutation makes it suitable. Relative variation of gate trigger voltage and current versus junction temperature typical values Characteristics Figure 7: RDS on More information. When reaching a defined forward voltage, the thyristor iselectrical triggered thyristor ETT will be presented.
Start display at page:. Thyristors for high power applications Forand overvoltage protection function in the thyristor is a step in this direction and makes the series. Then, we describe the details of an HVDC thyristor valve, and the. If required, please consult the factory for assistance. Sensitive high immunity 0.
Square wave Sine wave Data Sheet. Ultrafast recovery – V diode Datasheet – production data Description The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and.
Automotive TVS for load dump protection. For high speed switching circuits. T j turn-off commutation Low thermal resistance with clip bonding Very high 3 quadrant commutation capability G A1 Packages. E Content of header bars 1 and 2Film Capacitors Installation and maintenance instructions for thyristor modules series BT.